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FQP3P50 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FQP3P50 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2000 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, August 2000 Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 62mH, IAS = -2.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -2.7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -500 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- 0.42 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -500 V, VGS = 0 V -- -- -1 µA VDS = -400 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.35 A -- 3.9 4.9 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.35 A -- 2.35 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 510 660 pF Coss Output Capacitance -- 70 90 pF Crss Reverse Transfer Capacitance -- 9.5 12 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -250 V, ID = -2.7 A, RG = 25 Ω -- 12 35 ns tr Turn-On Rise Time -- 56 120 ns td(off) Turn-Off Delay Time -- 35 80 ns tf Turn-Off Fall Time -- 45 100 ns Qg Total Gate Charge VDS = -400 V, ID = -2.7 A, VGS = -10 V -- 18 23 nC Qgs Gate-Source Charge -- 3.6 -- nC Qgd Gate-Drain Charge -- 9.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.7 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -10.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.7 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -2.7 A, dIF / dt = 100 A/µs -- 270 -- ns Qrr Reverse Recovery Charge -- 1.5 -- µC |
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