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SI7465DP Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI7465DP Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 73113 S09-0271-Rev. C, 16-Feb-09 Vishay Siliconix Si7465DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 1.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient 0.001 0 1 80 100 20 10 0.01 Time (s) 60 40 0.1 Safe Operating Area 100 1 0.1 1 10 100 0.001 10 TA = 25 °C Single Pulse 0.1 DS(on) * Limited by R 0.01 1 ms 10 ms 100 s, DC 10 µs 100 µs 100 ms 1 s 10 s VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 52 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
Codice articolo simile - SI7465DP_13 |
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Descrizione simile - SI7465DP_13 |
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