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FQP12N20 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FQP12N20 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  ©2001 Fairchild Semiconductor Corporation February 2001 Rev. A1, February 2001 FQP12N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control. Features • 11.6A, 200V, RDS(on) = 0.28Ω @VGS = 10 V • Low gate charge ( typical 16 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Low level gate drive requirement allowing direct opration from logic drivers Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQP12N20L Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 11.6 A - Continuous (TC = 100°C) 7.35 A IDM Drain Current - Pulsed (Note 1) 46.4 A VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 11.6 A EAR Repetitive Avalanche Energy (Note 1) 9.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 90 W - Derate above 25°C 0.72 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.39 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-220 FQP Series G S D |
Codice articolo simile - FQP12N20 |
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