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FQD2N50B Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FQD2N50B
Spiegazioni elettronici  500V N-Channel MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD2N50B Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
May 2000
Rev. A, May 2000
QFET
QFET
QFET
QFETTM
FQD2N50B / FQU2N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
Features
• 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 4.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
! "
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"
"
S
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQD2N50 / FQU2N50
Units
VDSS
Drain-Source Voltage
500
V
ID
Drain Current
- Continuous (TC = 25°C)
1.6
A
- Continuous (TC = 100°C)
1.0
A
IDM
Drain Current
- Pulsed
(Note 1)
6.4
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
IAR
Avalanche Current
(Note 1)
1.6
A
EAR
Repetitive Avalanche Energy
(Note 1)
3.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
30
W
- Derate above 25°C
0.24
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
4.17
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)


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