Motore di ricerca datesheet componenti elettronici |
|
FQD17N08L Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
|
FQD17N08L Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page Rev. A2, December 2000 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2000 Fairchild Semiconductor International Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.83mH, IAS = 12.9A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 16.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 80 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.08 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 µA VDS = 64 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.45 A VGS = 5 V, ID = 6.45 A -- 0.076 0.090 0.100 0.115 Ω gFS Forward Transconductance VDS = 25 V, ID = 6.45 A -- 11.7 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 400 520 pF Coss Output Capacitance -- 120 155 pF Crss Reverse Transfer Capacitance -- 29 37 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 40 V, ID = 16.5 A, RG = 25 Ω -- 7 25 ns tr Turn-On Rise Time -- 290 590 ns td(off) Turn-Off Delay Time -- 20 50 ns tf Turn-Off Fall Time -- 75 160 ns Qg Total Gate Charge VDS = 64 V, ID = 16.5 A, VGS = 5 V -- 8.8 11.5 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 5.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12.9 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 51.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.9 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 16.5 A, dIF / dt = 100 A/µs -- 55 -- ns Qrr Reverse Recovery Charge -- 85 -- nC |
Codice articolo simile - FQD17N08L |
|
Descrizione simile - FQD17N08L |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |