SI7469DP-T1-E3 datasheet(3/9 Pages) VISHAY

Il numero della parte	SI7469DP-T1-E3

Spiegazioni elettronici	P-Channel 80-V (D-S) MOSFET

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Document Number: 73438

S09-0271-Rev. C, 16-Feb-09

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Vishay Siliconix

Si7469DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

5

10

15

20

25

30

35

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 V thru 4 V

3 V

VDS - Drain-to-Source Voltage (V)

0.020

0.021

0.022

0.023

0.024

0.025

0.026

0

5

10

15

20

25

30

35

40

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

0

2

4

6

8

10

0

20406080

100

120

ID = 10.2 A

Qg - Total Gate Charge (nC)

VDS = 64 V

VDS = 40 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

25 °C

TA = 125 °C

VGS - Gate-to-Source Voltage (V)

- 55 °C

0

1000

2000

3000

4000

5000

6000

7000

8000

0

10203040

50607080

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

Crss

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

TJ - Junction Temperature (°C)

ID = 10.2 A

VGS = 4.5 V

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