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SI4435DDY Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI4435DDY Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 68841 S09-0863-Rev. C, 18-May-09 Vishay Siliconix Si4435DDY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = - 50 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =1mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.01 0.02 0.03 0.04 0.05 0.06 012 3 45 67 8 910 TJ = 25 °C TJ = 125 °C ID =9.1 A VGS - Gate-to-Source Voltage (V) 0 20 40 60 80 100 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse Limited byRDS(on)* BVDSS Limited 1ms 100 µs 10 ms 1s 10 s 100 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 s, DC |
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