STD14NM50N datasheet(8/26 Pages) STMICROELECTRONICS

Il numero della parte	STD14NM50N

Spiegazioni elettronici	N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages

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Electrical characteristics

STB14NM50N, STD14NM50N, STF14NM50N, STI14NM50N, STP14NM50N

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Doc ID 16832 Rev 6

Figure 14.

Normalized gate threshold voltage

vs temperature

Figure 15.

Normalized on-resistance vs

temperature

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25

50

100

ID=250µA

AM07208v1

RDS(on)

1.7

1.3

0.9

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

2.1

ID=6A

VGS=10 V

AM07209v1

Figure 16.

Source-drain diode forward

characteristics

VSD

0.6

0.4

0.2

0

2

ISD(A)

(V)

1

0.8

5

3 4

6

TJ= -50 °C

TJ= 150 °C

TJ= 25 °C

7 8 9 10 11

1

1.2

1.4

AM15616v1

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STMicroelectronics	STD14NM50N	1Mb / 26P	N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages
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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STD14NM50N	1Mb / 26P	N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages
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