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SI3210-FT Scheda tecnica(PDF) 4 Page - Silicon image |
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SI3210-FT Scheda tecnica(HTML) 4 Page - Silicon image |
4 / 148 page Si3210/Si3211 4 Rev. 1.61 Table 2. Recommended Operating Conditions Parameter Symbol Test Condition Min* Typ Max* Unit Ambient Temperature TA F-grade 0 25 70 °C Ambient Temperature TA G-grade –40 25 85 °C Si3210/11 Supply Voltage VDDD,VDDA1, VDDA2 3.13 3.3/5.0 5.25 V Si3201 Supply Voltage VDD 3.13 3.3/5.0 5.25 V Si3201 Battery Voltage VBAT VBATH =VBAT –96 — –10 V *Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated. Product specifications are only guaranteed for the typical application circuit (including component tolerances). Table 3. AC Characteristics (VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade) Parameter Test Condition Min Typ Max Unit TX/RX Performance Overload Level THD = 1.5% 2.5 — — VPK Single Frequency Distortion1 2-wire – PCM or PCM – 2-wire: 200 Hz–3.4 kHz —— –45 dB Signal-to-(Noise + Distortion) Ratio2 200 Hz to 3.4 kHz D/A or A/D 8-bit Active off-hook, and OHT, any ZAC Figure 1 — — Audio Tone Generator Signal-to-Distortion Ratio2 0 dBm0, Active off-hook, and OHT, any Zac 45 — — dB Intermodulation Distortion — — –45 dB Gain Accuracy2 2-wire to PCM, 1014 Hz –0.5 0 0.5 dB PCM to 2-wire, 1014 Hz –0.5 0 0.5 dB Gain Accuracy over Frequency Figure 3,4 — — Group Delay over Frequency Figure 5,6 — — Gain Tracking3 1014 Hz sine wave, reference level –10 dBm signal level: 3 to –37 dB –0.25 — 0.25 dB –37 to –50 dB –0.5 — 0.5 dB –50 to –60 dB –1.0 — 1.0 dB Round-Trip Group Delay at 1000 Hz — 1100 — µs Gain Step Accuracy –6 to +6 dB –0.017 — 0.017 dB Gain Variation with Temperature All gain settings –0.25 — 0.25 dB Gain Variation with Supply VDDA =VDDA = 3.3/5 V ±5% –0.1 — 0.1 dB |
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