SI2308DS-T1-E3 datasheet(3/8 Pages) VISHAY

Il numero della parte	SI2308DS-T1-E3

Spiegazioni elettronici	N-Channel 60-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 70797

S09-0133-Rev. D, 02-Feb-09

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Vishay Siliconix

Si2308DS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

3

6

9

12

0

2468

10

VGS = 10 thru 5 V

4 V

3 V

1 V, 2 V

VDS - Drain-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

0369

12

VGS = 4.5 V

VGS = 10 V

ID - Drain Current (A)

0

2

4

6

8

10

0

1234

5

VDS = 30 V

ID = 2.0 A

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

3

6

9

12

0

1234

5

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

25 °C

0

100

200

300

400

0

6

12

18

24

30

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 2.0 A

TJ - Junction Temperature (°C)

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