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FMG1G50US60H Scheda tecnica(PDF) 6 Page - Fairchild Semiconductor

Il numero della parte FMG1G50US60H
Spiegazioni elettronici  Molding Type Module
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FMG1G50US60H Scheda tecnica(HTML) 6 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
T
C
= 25℃
IGBT
:
DIODE :
Rectangular Pulse Duration [sec]
0
100
200
300
400
500
600
700
0.1
1
10
100
300
Single Nonrepetitive
Pulse T
J
≤ 125℃
V
GE =
15V
R
G = 5.9
Collector-Emitter Voltage, V
CE [V ]
0
40
80
120
160
0
3
6
9
12
15
200 V
V
CC = 100 V
300 V
Common Emitter
R
L = 5.9
T
C = 25
Gate Charge, Qg [ nC ]
0.3
1
10
100
1000
0.1
1
10
100
300
Single Nonrepetitive
Pulse T
C = 25
Curves must be derated
linerarly with increase
in temperature
50us
100us
1㎳
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
Collector-Emitter Voltage, V
CE [V]
1
10
100
1000
1
10
100
300
Safe Operating Area
V
GE = 20V, TC = 100
o
C
Collector-Emitter Voltage, V
CE [V]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. RBSOA Characteristics
Fig 18. Transient Thermal Impedance
10
20
30
40
50
60
70
80
90
100
100
1000
10000
Eoff
Eoff
Eon
Common Emitter
V
CC = 300V, VGE = +/- 15V
R
G = 5.9
T
C = 25
0
C
T
C = 125
0
C
Collector Current, I
C [A]


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