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FMC7G20US60 Scheda tecnica(PDF) 6 Page - Fairchild Semiconductor |
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FMC7G20US60 Scheda tecnica(HTML) 6 Page - Fairchild Semiconductor |
6 / 9 page ©2001 Fairchild Semiconductor Corporation FMC7G20US60 Rev. A4 Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 17. RBSOA Characteristics Fig 18. Transient Thermal Impedance 10 15 20 25 30 35 40 100 1000 Eoff Eon Eoff Common Emitter V GE = ± 15V, R G = 10Ω T C = 25℃ ━━ T C = 125 ℃ ------ Collector Current, I C [A] 1 10 100 1000 1 10 100 Safe Operating Area V GE = 20V, TC = 100 ℃ Collector-Emitter Voltage, V CE [V] 0.3 1 10 100 1000 0.01 0.1 1 10 100 Single Nonrepetitive Pulse T C = 25 ℃ Curves must be derated linearly with increase in temperature 50us 100us 1㎳ DC Operation I C MAX. (Continuous) I C MAX. (Pulsed) Collector-Emitter Voltage, V CE [V] 0 10 203040 5060 0 3 6 9 12 15 300 V 200 V V CC = 100 V Common Emitter R L = 15 Ω T C = 25 ℃ Gate Charge, Q g [ nC ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 IGBT : DIODE : Rectangular Pulse Duration [sec] 0 100 200 300 400 500 600 700 0.1 1 10 80 Single Nonrepetitive Pulse T J ≤ 125℃ V GE = 15V R G = 10 Ω Collector-Emitter Voltage, V CE [V] |
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