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FM2G400US60 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FM2G400US60 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2001 Fairchild Semiconductor Corporation FM2G400US60 Rev. A Electrical Characteristics of IGBT T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V ∆B VCES/ ∆T J Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage VGE = VCE, IC = 400mA 5.0 6.0 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 400A, VGE = 15V -- 2.2 2.8 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 66000 -- pF Coes Output Capacitance -- 3600 -- pF Cres Reverse Transfer Capacitance -- 1980 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 400A, RG = 1.6Ω, VGE = 15V Inductive Load, TC = 25°C -- 870 -- ns tr Rise Time -- 550 -- ns td(off) Turn-Off Delay Time -- 720 -- ns tf Fall Time -- 178 250 ns Eon Turn-On Switching Loss -- 36 -- mJ Eoff Turn-Off Switching Loss -- 22 -- mJ Ets Total Switching Loss -- 58 116 mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 400A, RG = 1.6Ω, VGE = 15V Inductive Load, TC = 125°C -- 1230 -- ns tr Rise Time -- 580 -- ns td(off) Turn-Off Delay Time -- 890 -- ns tf Fall Time -- 190 -- ns Eon Turn-On Switching Loss -- 52 -- mJ Eoff Turn-Off Switching Loss -- 24 -- mJ Ets Total Switching Loss -- 75 -- mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- us Qg Total Gate Charge VCE = 300 V, IC = 400A, VGE = 15V -- 1800 2700 nC Qge Gate-Emitter Charge -- 350 -- nC Qgc Gate-Collector Charge -- 750 -- nC |
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