Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

FQD3P50TM Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FQD3P50TM
Spiegazioni elettronici  500V P-Channel MOSFET
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD3P50TM Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

  FQD3P50TM Datasheet HTML 1Page - Fairchild Semiconductor FQD3P50TM Datasheet HTML 2Page - Fairchild Semiconductor FQD3P50TM Datasheet HTML 3Page - Fairchild Semiconductor FQD3P50TM Datasheet HTML 4Page - Fairchild Semiconductor FQD3P50TM Datasheet HTML 5Page - Fairchild Semiconductor FQD3P50TM Datasheet HTML 6Page - Fairchild Semiconductor FQD3P50TM Datasheet HTML 7Page - Fairchild Semiconductor FQD3P50TM Datasheet HTML 8Page - Fairchild Semiconductor FQD3P50TM Datasheet HTML 9Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 9 page
background image
©2009 Fairchild Semiconductor Internati
Rev. A2, January 2009
FQD3P50 / FQU3P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
Features
• -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQD3P50 / FQU3P50
Units
VDSS
Drain-Source Voltage
-500
V
ID
Drain Current
- Continuous (TC = 25°C)
-2.1
A
- Continuous (TC = 100°C)
-1.33
A
IDM
Drain Current
- Pulsed
(Note 1)
-8.4
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
250
mJ
IAR
Avalanche Current
(Note 1)
-2.1
A
EAR
Repetitive Avalanche Energy
(Note 1)
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-4.5
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
50
W
- Derate above 25°C
0.4
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
S
D
G
January 2009
QFET
®
• RoHS
Compliant


Codice articolo simile - FQD3P50TM

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Fairchild Semiconductor
FQD3P50 FAIRCHILD-FQD3P50 Datasheet
638Kb / 9P
   500V P-Channel MOSFET
FQD3P50 FAIRCHILD-FQD3P50_09 Datasheet
766Kb / 9P
   500V P-Channel MOSFET
More results

Descrizione simile - FQD3P50TM

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Fairchild Semiconductor
FQD1P50TF FAIRCHILD-FQD1P50TF Datasheet
696Kb / 9P
   500V P-Channel MOSFET
FQD1P50 FAIRCHILD-FQD1P50 Datasheet
569Kb / 9P
   500V P-Channel MOSFET
FQB1P50 FAIRCHILD-FQB1P50 Datasheet
571Kb / 9P
   500V P-Channel MOSFET
FQB3P50 FAIRCHILD-FQB3P50 Datasheet
645Kb / 9P
   500V P-Channel MOSFET
FQB3P50TM FAIRCHILD-FQB3P50TM Datasheet
651Kb / 9P
   500V P-Channel MOSFET
FQD3P50 FAIRCHILD-FQD3P50_09 Datasheet
766Kb / 9P
   500V P-Channel MOSFET
FQPF3P50 FAIRCHILD-FQPF3P50 Datasheet
620Kb / 8P
   500V P-Channel MOSFET
FQD3P50 FAIRCHILD-FQD3P50 Datasheet
638Kb / 9P
   500V P-Channel MOSFET
FQPF1P50 FAIRCHILD-FQPF1P50 Datasheet
564Kb / 8P
   500V P-Channel MOSFET
logo
Kersemi Electronic Co.,...
KSMD1P50 KERSEMI-KSMD1P50 Datasheet
1Mb / 8P
   500V P-Channel MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com