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TPS1120DRG4 Scheda tecnica(PDF) 7 Page - Texas Instruments |
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TPS1120DRG4 Scheda tecnica(HTML) 7 Page - Texas Instruments |
7 / 15 page TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 7 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS 0.3 0.2 0.1 0 – 0.1 – 1 0.4 0.5 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT 0.6 – 10 ID – Drain Current – A 0.7 VGS = – 2.7 V VGS = – 3 V VGS = – 4.5 V VGS = –10 V TJ = 25°C Figure 5 200 150 50 0 0 – 1 – 2 – 3 – 4 – 5 – 6 250 300 CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 350 – 7 – 8 – 9 –12 100 –10 –11 Coss VDS – Drain-to-Source Voltage – V Ciss† Crss‡ VGS = 0 f = 1 MHz TJ = 25°C † Crss + Cgd,Coss + Cds ) Cgs Cgd Cgs ) Cgd ≈ C ds ) C gd ‡ C iss + Cgs ) Cgd,Cds(shorted) Figure 6 Figure 7 1.2 0.9 0.8 0.6 1.3 1.4 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE (NORMALIZED) vs JUNCTION TEMPERATURE 1.5 1.1 1 0.7 – 50 0 50 100 150 TJ – Junction Temperature – °C VGS = – 10 V ID = – 1A – 0.1 0 – 0.6 –1.2 –1.8 SOURCE-TO-DRAIN DIODE CURRENT vs SOURCE-TO-DRAIN VOLTAGE –1 –10 – 0.2 – 0.4 – 0.8 – 1 –1.4 –1.6 VSD – Source-to-Drain Voltage – V Pulse Test TJ = 150°C TJ = 25°C TJ = – 40°C Figure 8 |
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