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TPS1120D Scheda tecnica(PDF) 4 Page - Texas Instruments |
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TPS1120D Scheda tecnica(HTML) 4 Page - Texas Instruments |
4 / 15 page TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics at TJ = 25°C (unless otherwise noted) static PARAMETER TEST CONDITIONS TPS1120 UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = – 250 µA –1 – 1.25 – 1.50 V VSD Source-to-drain voltage (diode forward voltage)† IS = – 1 A, VGS = 0 V – 0.9 V IGSS Reverse gate current, drain short circuited to source VDS = 0 V, VGS = – 12 V ±100 nA IDSS Zero gate voltage drain current VDS = – 12 V, TJ = 25°C – 0.5 µA IDSS Zero-gate-voltage drain current DS , VGS = 0 V TJ = 125°C –10 µA † VGS = – 10 V ID = – 1.5 A 180 rDS( ) Static drain to source on state resistance† VGS = – 4.5 V ID = – 0.5 A 291 400 m Ω rDS(on) Static drain-to-source on-state resistance† VGS = – 3 V ID =0 2 A 476 700 m Ω VGS = – 2.7 V ID = – 0.2 A 606 850 gfs Forward transconductance† VDS = – 10 V, ID = – 2 A 2.5 S † Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2% static PARAMETER TEST CONDITIONS TPS1120Y UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = – 250 µA – 1.25 V VSD Source-to-drain voltage (diode forward voltage)† IS = – 1 A, VGS = 0 V – 0.9 V † VGS = – 10 V ID = – 1.5 A 180 rDS( ) Static drain to source on state resistance† VGS = – 4.5 V ID = – 0.5 A 291 m Ω rDS(on) Static drain-to-source on-state resistance† VGS = – 3 V ID =0 2 A 476 m Ω VGS = – 2.7 V ID = – 0.2 A 606 gfs Forward transconductance† VDS = – 10 V, ID = – 2 A 2.5 S † Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2% dynamic PARAMETER TEST CONDITIONS TPS1120, TPS1120Y UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Qg Total gate charge 5.45 Qgs Gate-to-source charge VDS = – 10 V, VGS = – 10 V, ID = – 1 A 0.87 nC Qgd Gate-to-drain charge 1.4 td(on) Turn-on delay time 4.5 ns td(off) Turn-off delay time VDD = – 10 V, RL = 10 Ω,ID = – 1 A, 13 ns tr Rise time DD , RG = 6 Ω, L , See Figures 1 and 2 D , 10 tf Fall time 2 ns trr(SD) Source-to-drain reverse recovery time IF = 5.3 A, di/dt = 100 A/ µs 16 |
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