Si4466DY datasheet(2/8 Pages) VISHAY

Il numero della parte	Si4466DY

Spiegazioni elettronici	N-Channel 2.5-V (G-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 71820

S09-0767-Rev. F, 04-May-09

Vishay Siliconix

Si4466DY

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.6

1.0

1.4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

µA

VDS = 20 V, VGS = 0 V, TJ = 55 °C

5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

30

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 13.5 A

0.0055

0.009

Ω

VGS = 2.5 V, ID = 11 A

0.0078

0.013

Forward Transconductancea

gfs

VDS = 10 V, ID = 13.5 A

70

S

Diode Forward Voltagea

VSD

IS = 2.7 A, VGS = 0 V

0.70

1.1

V

Dynamicb

Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 13.5 A

40

60

nC

Gate-Source Charge

Qgs

7

Gate-Drain Charge

Qgd

12

Gate Resistance

Rg

0.5

1.9

3.3

Ω

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

20

30

ns

Rise Time

tr

15

25

Turn-Off Delay Time

td(off)

150

250

Fall Time

tf

70

110

Source-Drain Reverse Recovery Time

trr

IF = 2.7 A, dI/dt = 100 A/µs

55

90

Output Characteristics

0

10

20

30

40

50

0

1234

5

VGS = 5 V thru 2.5 V

VDS - Drain-to-Source Voltage (V)

2 V

Transfer Characteristics

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

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