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Si2337DS Scheda tecnica(PDF) 6 Page - Vishay Siliconix |
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Si2337DS Scheda tecnica(HTML) 6 Page - Vishay Siliconix |
6 / 10 page www.vishay.com 6 Document Number: 73533 S09-0133-Rev. D, 02-Feb-09 Vishay Siliconix Si2337DS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73533. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 0.1 0.01 Square Wave Pulse Duration (s) 10-4 10-3 10-2 10-1 1 10 600 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - T A = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 100 Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 1 10-1 10-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) |
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