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FDS9431A Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDS9431A
Spiegazioni elettronici  P-Channel 2.5V Specified MOSFET
Download  8 Pages
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS9431A Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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FDS9431A Rev. A2
Features
-3.5 A, -20 V. R
DS(ON) = 0.130 Ω @ VGS = -4.5 V
R
DS(ON) = 0.180 Ω @ VGS =
-2.5 V.
Fast switching speed.
High density cell design for extremely low R
DS(ON).
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
September 1999
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
- Continuous
(Note 1a)
-3.5
A
- Pulsed
-18
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
PD
(Note 1c)
1.0
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RqJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS9431A
FDS9431A
13’’
12mm
2500 units
FDS9431A
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.
Applications
DC/DC converter
Power management
Load switch
Battery protection
S
D
S
S
SO-8
D
D
D
G
5
6
8
3
1
7
4
2


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