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TC682EOA Scheda tecnica(PDF) 2 Page - Microchip Technology |
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TC682EOA Scheda tecnica(HTML) 2 Page - Microchip Technology |
2 / 14 page TC682 DS21453D-page 2 2002-2012 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* VIN .......................................................................+5.8V VIN dV/dT ........................................................ 1V/sec VOUT ...................................................................-11.6V Short-Circuit Duration - VOUT ..................... Continuous Power Dissipation (TA 70°C) 8-Pin PDIP ..............................................730 mW 8-Pin SOIC ..............................................470 mW Operating Temperature Range............. -40°C to +85°C Storage Temperature (Unbiased) .......-65°C to +150°C *Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC682 ELECTRICAL SPECIFICATIONS Electrical Characteristics: Over operating temperature range, VIN = +5V, test circuit Figure 3-1 unless otherwise noted. Symbol Parameter Min Typ Max Units Test Conditions VIN Supply Voltage Range 2.4 — 5.5 V RL = 2 k IIN Supply Current — — 185 — 300 400 AR L = , TA = 25°C RL = ROUT VOUT Source Resistance — — 140 — 170 180 230 320 IL – = 10 mA, T A = 25°C IL – = 10 mA IL – = 5 mA, V IN = 2.8V FOSC Oscillator Frequency — 12 — kHz PEFF Power Efficiency 90 92 — % RL = 2 k, TA = 25°C VOUTEFF Voltage Conversion Efficiency 99 99.9 — % VOUT, RL = |
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