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FDS6984SQ1 Scheda tecnica(PDF) 5 Page - Fairchild Semiconductor |
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FDS6984SQ1 Scheda tecnica(HTML) 5 Page - Fairchild Semiconductor |
5 / 9 page FDS6680S Rev C (W) Typical Characteristics: Q2 0 2 4 6 8 10 0369 12 15 18 21 Qg, GATE CHARGE (nC) ID =10A VDS = 5V 15V 10V 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100µs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 135 oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 135°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. |
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