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FDS6898AZ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDS6898AZ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page October 2001 ©2001 Fairchild Semiconductor Corporation FDS6898AZ Rev C (W) FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench ® ® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 9.4 A, 20 V RDS(ON) = 14 m Ω @ V GS = 4.5 V RDS(ON) = 18 m Ω @ V GS = 2.5 V • Low gate charge (16 nC typical) • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G D2 D2 D1 D1 S2 G2 S1 G1 Pin 1 SO-8 4 5 3 6 2 7 1 8 Q1 Q2 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current – Continuous (Note 1a) 9.4 A – Pulsed 38 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 PD (Note 1c) 0.9 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6898AZ FDS6898AZ 13’’ 12mm 2500 units |
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