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FDS4935 Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
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FDS4935 Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDS4935A Rev A(W) Typical Characteristics 0 2 4 6 8 10 0 4 8 1216 2024 Qg, GATE CHARGE (nC) I D = -8.8A VDS = -5V -10V -15V 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 µs RDS(ON) LIMIT V GS = -10V SINGLE PULSE RθJA = 135 oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, TIME (sec) SINGLE PULSE RθJA = 135°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 RθJA(t) = r(t) + RθJA RθJA = 135 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
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