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FDS2170N7 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDS2170N7
Spiegazioni elettronici  200V N-Channel PowerTrench MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS2170N7 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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FDS2170N7 Rev C3(W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings
WDSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 100 V, ID=3.0 A
370
mJ
IAR
Drain-Source Avalanche Current
3
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250 µA
200
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
231
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 160 V, VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V, VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250 µA
2
4
4.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–10
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 3.0 A
VGS = 10 V, ID = 3.0 A,TJ = 125°C
107
213
128
268
m
gFS
Forward Transconductance
VDS = 10 V,
ID = 3.0 A
15
S
Dynamic Characteristics
Ciss
Input Capacitance
1292
pF
Coss
Output Capacitance
72
pF
Crss
Reverse Transfer Capacitance
VDS = 100 V, V GS = 0 V,
f = 1.0 MHz
24
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.5
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
12
22
ns
tr
Turn–On Rise Time
5
10
ns
td(off)
Turn–Off Delay Time
30
48
ns
tf
Turn–Off Fall Time
VDD = 100 V, ID = 1 A,
VGS = 10 V,
RGEN = 6 Ω
23
36
ns
Qg
Total Gate Charge
26
36
nC
Qgs
Gate–Source Charge
7
nC
Qgd
Gate–Drain Charge
VDS = 100 V, ID = 3.0 A,
VGS = 10 V
10
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.5
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.5 A
(Note 2)
0.76
1.2
V
trr
Diode Reverse Recovery Time
95
nS
Qrr
Diode Reverse Recovery Charge
IF = 3.0A
diF/dt = 100 A/µs
(Note 2)
552
nC
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a)
40°C/W when
mounted on a 1in
2 pad
of 2 oz copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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