FCB36N60N datasheet(3/8 Pages) FAIRCHILD

Il numero della parte	FCB36N60N

Spiegazioni elettronici	N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

Homepage	http://www.fairchildsemi.com

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FCB36N60N Rev. C0

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2345

67

0.3

1

10

100

1000

-55

o

C

150

o

C

*Notes:

1. VDS = 20V

2. 250

μs Pulse Test

25

o

C

VGS, Gate-Source Voltage[V]

0.1

1

10

100

0.1

1

10

100

*Notes:

1. 250

μs Pulse Test

2. TC = 25

o

C

VGS = 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

VDS, Drain-Source Voltage[V]

0

20406080

100

0

0.1

0.2

0.3

*Notes: TC = 25

o

C

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.4

0.6

0.8

1.0

1.2

1

10

100

300

*Notes:

1. V

GS = 0V

2. 250

μs Pulse Test

150

o

C

V

SD, Body Diode Forward Voltage [V]

25

o

C

025

50

75

100

0

2

4

6

8

10

*Notes: ID = 18A

VDS = 120V

VDS = 300V

VDS = 480V

Qg, Total Gate Charge [nC]

0.1

1

10

100

600

1

10

100

1000

10000

100000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Notes:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

Codice articolo simile - FCB36N60N

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Fairchild Semiconductor	FCB36N60N	239Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓
Inchange Semiconductor ...	FCB36N60N	333Kb / 2P	isc N-Channel MOSFET Transistor
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FCB36N60N Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor

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