SI8467DB datasheet(1/8 Pages) VISHAY

Il numero della parte	SI8467DB

Spiegazioni elettronici	P-Channel 20 V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si8467DB

Document Number: 65930

S10-0643-Rev. A, 22-Mar-10

www.vishay.com

1

P-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET

® Power MOSFET

•

Ultra-Small 1 mm x 1 mm Maximum Outline

•

Ultra-Thin 0.548 mm Maximum Height

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switches, Battery Switches and Charger Switches

in Portable Device Applications

•

DC/DC Converters

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a, e

Qg (Typ.)

- 20

0.073 at VGS = - 4.5 V

- 3.4

6.9 nC

0.125 at VGS = - 2.5 V

- 2.6

Notes:

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.

c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.

d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.

e. Based on TA = 25 °C.

MICRO FOOT

Device Marking: 8467

xxx = Date/Lot Traceability Code

Ordering Information: Si8467DB-T2-E1 (Lead (Pb)-free and Halogen-free)

Bump Side View

Backside View

S

D

G

S

1

2

4

3

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TA = 25 °C

ID

- 3.7a

A

TA = 70 °C

- 2.7a

TA = 25 °C

- 2.5b

TA = 70 °C

- 2.0b

Pulsed Drain Current

IDM

- 15

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 1.5a

TA = 25 °C

- 0.65b

Maximum Power Dissipation

TA = 25 °C

PD

1.8a

W

TA = 70 °C

1.1a

TA = 25 °C

0.78b

TA = 70 °C

0.5b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Package Reflow Conditionsc

VPR

260

IR/Convection

260

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