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SI8406DB Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI8406DB Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si8406DB Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com N-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • Ultra-small 1.5 mm x 1 mm Maximum Outline • Ultra-thin 0.59 mm Maximum Height • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch • Battery Management • Boost Converter Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. Case in defined as the top surface of the package. e. TC = 25 °C package limited. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 20 0.033 at VGS = 4.5 V 16e 7.5 nC 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 MICRO FOOT Device Marking: 8406 xxx = Date/Lot Traceability Code Ordering Information: Si8406DB-T2-E1 (Lead (Pb)-free and Halogen-free) DD SS SG 1 2 6 3 5 4 Bump Side View Backside View N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 16e A TC = 70 °C 13.5 TA = 25 °C 7.8a, b TA = 70 °C 6.2a, b Pulsed Drain Current (t = 300 µs) IDM 30 Continuous Source-Drain Diode Current TC = 25 °C IS 11 TA = 25 °C 2.3a, b Maximum Power Dissipation TC = 25 °C PD 13 W TC = 70 °C 8.4 TA = 25 °C 2.77a, b TA = 70 °C 1.77a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Package Reflow Conditionsc IR/Convection 260 |
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