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1SV172TE85LF Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte 1SV172TE85LF
Spiegazioni elettronici  VHF~UHF Band RF Attenuator Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

1SV172TE85LF Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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1SV172
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV172
VHF~UHF Band RF Attenuator Applications
• Useful for small size tuner
• Small total capacitance: CT = 0.25 pF (typ.)
• Low series resistance: rs = 3 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
50
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
50
V
Reverse current
IR
VR = 50 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.95
V
Total capacitance
(Note)
CT
VR = 50 V, f = 1 MHz
0.25
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
3
Ω
Note: CT is measured by 3 terminal method with capacitance bridge.
Marking
Unit: mm
JEDEC
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 0.013 g (typ.)


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