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TLP748JF Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLP748JF Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page TLP748J 2008-12-01 2 HOC-0533 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 39°C) ∆IF / °C −0.7 mA / °C Peak forward current (100 µs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Peak forward voltage (RGK = 27 kΩ) VDRM 600 V Peak reverse voltage (RGK = 27 kΩ) VRRM 600 V On −state current IT(RMS) 150 mA On −state current derating (Ta ≥ 25°C) ∆IT / °C −2.0 mA / °C Peak on −state current (100µs pulse, 120 pps) ITP 3 A Peak one cycle surge current ITSM 2 A Peak reverse gate voltage VGM 5 V Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H.≤ 60%) BVS 4000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 240 Vac Forward current IF 15 ― 25 mA Operating temperature Topr −25 ― 85 °C Gate to cathode resistance RGK ― 10 27 kΩ Gate to cathode capacity CGK ― 0.01 0.1 µF Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. |
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