FDD5614P datasheet(1/6 Pages) FAIRCHILD

Il numero della parte	FDD5614P

Spiegazioni elettronici	60V P-Channel PowerTrench MOSFET

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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February 2001

2001 Fairchild Semiconductor Corporation

FDD5614P Rev C(W)

FDD5614P

60V P-Channel PowerTrench



 MOSFET

General Description

This 60V P-Channel MOSFET uses Fairchild’s high

voltage PowerTrench process. It has been optimized

for power management applications.

Applications

• DC/DC converter

• Power management

• Load switch

Features

• –15 A, –60 V. R

DS(ON) = 100 m

Ω @ V

GS = –10 V

RDS(ON) = 130 m

Ω @ V

GS = –4.5 V

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

G

S

D

TO-252

S

G

D

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–60

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current

– Continuous

(Note 3)

–15

A

– Pulsed

(Note 1a)

–45

Power Dissipation for Single Operation

(Note 1)

42

(Note 1a)

3.8

PD

(Note 1b)

1.6

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

3.5

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

40

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

96

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD5614P

13’’

12mm

2500 units

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