FDC636P datasheet(2/4 Pages) FAIRCHILD

Il numero della parte	FDC636P

Spiegazioni elettronici	P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

Homepage	http://www.fairchildsemi.com

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ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, ID = -250 µA

-20

V

∆BV

DSS/∆TJ

Breakdown Voltage Temp. Coefficient

I

D = -250 µA, Referenced to 25

oC

-22

mV/

oC

I

DSS

Zero Gate Voltage Drain Current

V

DS = -16 V, VGS = 0 V

-1

µA

T

J = 55

oC

-10

µA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 8 V, VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -8 V, VDS = 0 V

-100

nA

ON CHARACTERISTICS (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = -250 µA

-0.4

-0.6

-1

V

∆V

GS(th)/∆TJ

Gate Threshold VoltageTemp.Coefficient

I

D = -250 µA, Referenced to 25

oC

2

mV/

oC

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = -4.5 V, ID = -2.8 A

0.11

0.13

Ω

T

J = 125

oC

0.17

0.21

V

GS = -2.5 V, ID = -2.2 A

0.146

0.18

I

D(on)

On-State Drain Current

V

GS = -4.5 V, VDS = -5 V

-11

A

g

FS

Forward Transconductance

V

DS = -5 V, ID = -2.8 A

4

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = -10 V, VGS = 0 V,

390

pF

C

oss

Output Capacitance

f = 1.0 MHz

170

pF

C

rss

Reverse Transfer Capacitance

45

pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

Turn - On Delay Time

V

DD = -10 V, ID = -1 A,

30

48

ns

t

r

Turn - On Rise Time

V

GS = -4.5 V, RGEN = 6 Ω

26

42

ns

t

D(off)

Turn - Off Delay Time

8

16

ns

t

f

Turn - Off Fall Time

15

27

ns

Q

g

Total Gate Charge

V

DS = -5 V, ID = -2.8 A,

6

8.5

nC

Q

gs

Gate-Source Charge

V

GS = -4.5 V

0.9

nC

Q

gd

Gate-Drain Charge

1

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

Continuous Source Diode Current

-1.3

A

V

SD

Drain-Source Diode Forward Voltage

V

GS = 0 V, IS = -1.3 A

(Note 2)

-0.77

-1.2

V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

a. 78

oC/W when mounted on a 1 in2 pad of 2oz Cu on FR-4 board.

b. 156

oC/W when mounted on a minimum pad of 2oz Cu on FR-4 board.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

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