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FDC6329L Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDC6329L Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page November 1998 FDC6329L Integrated Load Switch General Description Features Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter FDC6329L Units V IN Input Voltage Range (Note 1) 2.5 - 8 V V ON/OFF On/Off Voltage Range 1.5 - 8 V I L Load Current - Continuous (Note 2) 2.5 A - Pulsed 10 P D Maximum Power Dissipation (Note 2) 0.7 W T J,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500Ohm) 6 kV THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 2) 180 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 2) 60 °C/W FDC6329L Rev.C This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.5A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q2) in one tiny SuperSOT TM-6 package. V DROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07Ω V DROP=0.2V @ V IN=2.5V, IL=1.9A. R(ON) = 0.105Ω. Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model). High performance trench technology for extremely low on-resistance. SuperSOT TM-6 package design using copper lead frame for superior thermal and electrical capabilities. See Application Circuit 1 5 6 3 2 Q2 Q1 4 V , C OUT 1 R2 V , R IN 1 ON/OFF V R , C1 1 V , C OUT 1 IN OUT ON/O FF EQUIVALENT CIRCUIT V DROP + - SuperSOT -6 TM .329 pin 1 SOT-23 SuperSOT TM-8 SOIC-16 SO-8 SOT-223 SuperSOT TM-6 |
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