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BCP53T1G Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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BCP53T1G Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 8 1 Publication Order Number: BCP53T1/D BCP53 Series, SBCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current: 1.5 A • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Device Marking: BCP53T1 = AH BCP53−10T1 = AH−10 BCP53−16T1 = AH−16 • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO −80 Vdc Collector−Base Voltage VCBO −100 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient (surface mounted) RqJA 83.3 °C/W Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath TL 260 10 °C s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Device Package Shipping† ORDERING INFORMATION SOT−223 CASE 318E STYLE 1 MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2,4 BASE 1 EMITTER 3 MARKING DIAGRAM BCP53T1G SOT−223 (Pb−Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com BCP53−16T1G SOT−223 (Pb−Free) 1000 / Tape & Reel BCP53−10T1G SOT−223 (Pb−Free) 1000 / Tape & Reel BCP53−16T3G SOT−223 (Pb−Free) 4000 / Tape & Reel 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package AYW XXXXXG G (*Note: Microdot may be in either location) SBCP53−16T1G SOT−223 (Pb−Free) 1000 / Tape & Reel SBCP53−10T1G SOT−223 (Pb−Free) 1000 / Tape & Reel SBCP53−10T1G SOT−223 (Pb−Free) 1000 / Tape & Reel |
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