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AM4922N Scheda tecnica(PDF) 1 Page - Analog Power |
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AM4922N Scheda tecnica(HTML) 1 Page - Analog Power |
1 / 3 page 1 AM4922N Analog Power August, 2005 - Rev. A PRELIMINARY Publication Order Number: DS-AM4922_A These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. VDS (V) rDS(on) m(Ω)ID (A) 22 @ VGS = 4.5V 7.8 28 @ VGS = 2.5V 7.0 PRODUCT SUMMARY 20 N-Channel 20-V (D-S) MOSFET •Low r DS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SO-8 Surface Mount Package Saves Board Space • High power and current handling capability • Low side high current DC-DC Converter applications Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 2 3 4 7 8 5 6 Symbol Limit Units VDS 20 VGS ±8 TA=25 oC7.8 TA=70 oC6.4 IDM ±50 IS 2.3 A TA=25 oC2.0 TA=70 oC1.3 TJ, Tstg -55 to 150 oC Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W Symbol Maximum Units t <= 10 sec 62.5 oC/W Steady-State 110 oC/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a RθJA |
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