AM4463P datasheet(1/5 Pages) ANALOGPOWER

Il numero della parte	AM4463P

Spiegazioni elettronici	P-Channel 20-V (D-S) MOSFET

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AM4463P

Analog Power

January, 2004 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM4463_C

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r

DS(on) assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

P-Channel 20-V (D-S) MOSFET

•Low r

DS(on) Provides Higher Efficiency and

Extends Battery Life

•

Miniature SO-8 Surface Mount Package Saves

Board Space

•

High power and current handling capability

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

VDS (V)

rDS(on) m(Ω)ID (A)

13 @ VGS = -4.5V

-11.5

19 @ VGS = -2.5V

-10

35 @ VGS = -1.8V

-7.7

PRODUCT SUMMARY

-20

Symbol Maximum Units

VDS

-20

VGS

±12

TA=25

oC-13.4

TA=70

oC-8.4

IDM

±50

IS

-2.1

A

TA=25

oC3.1

TA=70

oC2.0

TJ, Tstg -55 to 150

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Symbol

Maximum

Units

Maximum Junction-to-Case

a

t <= 5 sec

RθJC

25

oC/W

Maximum Junction-to-Ambient

a

t <= 5 sec

RθJA

40

oC/W

THERMAL RESISTANCE RATINGS

Parameter

1

2

3

45

6

7

8

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