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AM7333PE Scheda tecnica(PDF) 1 Page - Analog Power |
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AM7333PE Scheda tecnica(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM7333PE P-Channel 30-V (D-S) MOSFET VDS (V) ID(A) -10.9 -8.1 Symbol Limit Units VDS -30 VGS ±20 TA=25°C -10.9 TA=70°C -8.2 IDM -50 IS -4.5 A TA=25°C 3.5 TA=70°C 2 TJ, Tstg -55 to 150 °C Symbol Maximum Units 35 81 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Gate-Source Voltage Continuous Drain Current a PRODUCT SUMMARY -30 rDS(on) (mΩ) 20 @ VGS = -10V 36 @ VGS = -4.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM7333PE_1A |
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