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AM3520C Scheda tecnica(PDF) 1 Page - Analog Power

Il numero della parte AM3520C
Spiegazioni elettronici  N & P-Channel 20-V (D-S) MOSFET
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Produttore elettronici  ANALOGPOWER [Analog Power]
Homepage  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM3520C Scheda tecnica(HTML) 1 Page - Analog Power

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AM3520C
PRELIMINARY
Publication Order Number:
DS-AM3520_F
Analog Power
1
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r
DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
N & P-Channel 20-V (D-S) MOSFET
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol N-Channe l P-Channe l Units
VDS
20
-20
VGS
±12
±12
TA=25
o
C
3.7
-2.7
TA=70
o
C
2.9
-2.1
IDM
8
-8
IS
1.05
-1.05
A
TA=25
o
C
TA=70
o
C
TJ, Tstg
o
C
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Parame te r
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
Continuous Drain Current
a
ID
A
Power Dissipation
a
PD
Operating Junction and Storage Temperature Range
W
1.15
0.7
-55 to 150
Typ
Max
Typ
Max
t <= 10 sec
93
110
93
110
Steady State
130
150
130
150
Maximum Junction-to-Ambient
a
oC/W
Unit
P-Channel
N-Channel
RthJA
THERMAL RESISTANCE RATINGS
Parameter
Symbol
S
2
D
2
G
2
P-Channel MOSFET
D
1
S
1
G
1
N-Channel MOSFET
TSOP-6
Top View
D1
S1
D2
G1
S2
G2
1
2
3
6
5
4
VDS (V)
rDS(on) ( )
ID (A)
0.058 @ VGS = 4.5V
3.7
0.082 @ VGS = 2.5V
3.1
0.160 @ VGS = 1.8V
2.2
0.112 @ VGS = -4.5V
-2.7
0.172 @ VGS = -2.5V
-2.2
0.210 @ VGS = -1.8V
-2.0
20
PRODUCT SUMMARY
-20


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