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AM3520C Scheda tecnica(PDF) 1 Page - Analog Power |
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AM3520C Scheda tecnica(HTML) 1 Page - Analog Power |
1 / 7 page AM3520C PRELIMINARY Publication Order Number: DS-AM3520_F Analog Power 1 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N & P-Channel 20-V (D-S) MOSFET • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe TSOP-6 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol N-Channe l P-Channe l Units VDS 20 -20 VGS ±12 ±12 TA=25 o C 3.7 -2.7 TA=70 o C 2.9 -2.1 IDM 8 -8 IS 1.05 -1.05 A TA=25 o C TA=70 o C TJ, Tstg o C Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W 1.15 0.7 -55 to 150 Typ Max Typ Max t <= 10 sec 93 110 93 110 Steady State 130 150 130 150 Maximum Junction-to-Ambient a oC/W Unit P-Channel N-Channel RthJA THERMAL RESISTANCE RATINGS Parameter Symbol S 2 D 2 G 2 P-Channel MOSFET D 1 S 1 G 1 N-Channel MOSFET TSOP-6 Top View D1 S1 D2 G1 S2 G2 1 2 3 6 5 4 VDS (V) rDS(on) ( ) ID (A) 0.058 @ VGS = 4.5V 3.7 0.082 @ VGS = 2.5V 3.1 0.160 @ VGS = 1.8V 2.2 0.112 @ VGS = -4.5V -2.7 0.172 @ VGS = -2.5V -2.2 0.210 @ VGS = -1.8V -2.0 20 PRODUCT SUMMARY -20 |
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