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NZT45C11 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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NZT45C11 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 3 page Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 100 mA, IB = 0 60 V ICES Collector-Cutoff Current VCB = 90 V, IE = 0 10 µA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 100 µA PNP Current Driver (continued) ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS hFE DC Current Gain IC = 0.2 A, VCE = 1.0 V IC = 1.0 A, VCE = 1.0 V 40 20 120 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 50 mA 0.5 V VBE(sat) Base-Emitter On Voltage IC = 1.0 A, IB = 100 mA 1.3 V fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 4.0 V, 32 MHz |
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