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NZT44H8 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte NZT44H8
Spiegazioni elettronici  NPN Power Amplifier
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

NZT44H8 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 100 mA, IB = 0
60
V
ICBO
Collector-Cutoff Current
VCB = 60 V, IE = 0
10
µA
IEBO
Emitter-Cutoff Current
VEB = 5.0 V, IC = 0
100
µA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 2.0 A, VCE = 1.0 V
IC = 4.0 A, VCE = 1.0 V
60
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 8.0 A, IB = 0.4 A
1.0
V
VBE(sat)
Base-Emitter On Voltage
IC = 8.0 A, IB = 0.8 A
1.5
V
VBE(on)
Base-Emitter On Voltage
IC = 10 mA, VCE = 2.0 V
0.52
0.65
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 500 mA, VCE = 10 V,
50
MHz
DC Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P4Q
0.1
1
10
0
0.2
0.4
0.6
0.8
I
- COLLECTOR CURRENT (A)
C
ββ = 10
125 ºC
- 40 ºC
25 °C
Typical Pulsed Current Gain
vs Collector Current
0.01 0.02
0.05 0.1
0.2
0.5
1
2
5
10
0
50
100
150
200
I - COLLECTOR CURRENT (A)
C
125 ° C
25 °C
- 40 °C
Vce = 5V
NPN Power Amplifier
(continued)


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