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NZT44H8 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte NZT44H8
Spiegazioni elettronici  NPN Power Amplifier
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

NZT44H8 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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D44H8
NPN Power Amplifier
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4Q.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
60
V
IC
Collector Current - Continuous
8.0
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
TO-220
B
C
E
NZT44H8
B
C
C
SOT-223
E
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
D44H8
*NZT44H8
PD
Total Device Dissipation
Derate above 25
°C
60
480
1.5
12
W
mW/
°C
RθJC
Thermal Resistance, Junction to Case
2.1
°C/W
RθJA
Thermal Resistance, Junction to Ambient
62.5
83.3
°C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Discrete POWER & Signal
Technologies
© 1997 Fairchild Semiconductor Corporation


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