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BDW23A Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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BDW23A Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BDW23 : BDW23A : BDW23B : BDW23C 45 60 80 100 V V V V VCEO Collector-Emitter Voltage : BDW23 : BDW23A : BDW23B : BDW23C 45 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP *Collector Current (Pulse) 8 A IB Base Current 0.2 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1.Base 2.Collector 3.Emitter 1 TO-220 |
Codice articolo simile - BDW23A |
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Descrizione simile - BDW23A |
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