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BD239C Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte BD239C
Spiegazioni elettronici  Medium Power Linear and Switching Applications
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BD239C Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
Rev. A, February 2000
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW=350
µs, duty Cycle≤2.0% Pulsed
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
45
60
80
100
V
V
V
V
VCER
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
55
70
90
115
V
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
2
A
ICP
*Collector Current (Pulse)
4
A
IB
Base Current
0.6
A
PC
Collector Dissipation (TC=25°C)
30
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
*Collector-Emitter Sustaining Voltage
: BD239
: BD239A
: BD239B
: BD239C
IC = 30mA, IB = 0
45
60
80
100
V
V
V
V
ICEO
Collector Cut-off Current
: BD239/A
: BD239B/C
VCE = 30V, IB = 0
VCE = 60V, IB = 0
0.3
0.3
mA
mA
ICES
Collector Cut-off Current
: BD239
: BD239A
: BD239B
: BD239C
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
0.2
0.2
0.2
0.2
mA
mA
mA
mA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
1
mA
hFE
*DC Current Gain
VCE = 4V, IC = 0.2A
VCE = 4V, IC = 1A
40
15
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
0.7
V
VBE(on)
*Base-Emitter ON Voltage
VCE = 4V, IC = 1A
1.3
V
BD239/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD240/A/B/C respectively
1.Base
2.Collector
3.Emitter
1
TO-220


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