KA1H0565R-YDTU datasheet(3/10 Pages) FAIRCHILD

Il numero della parte	KA1H0565R-YDTU

Spiegazioni elettronici	Precision fixed operating frequency, Internal thermal shutdown function

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

Homepage	http://www.fairchildsemi.com

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3 / 10 page

KA1M0565R/KA1H0565R

3

Electrical Characteristics (SFET part)

(Ta=25

°C unless otherwise specified)

Note:

Pulse test: Pulse width

≤ 300µS, duty cycle ≤ 2%

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Drain source breakdown voltage

BVDSS

VGS=0V, ID=50

µA

650

-

V

Zero gate voltage drain current

IDSS

VDS=Max., Rating,

VGS=0V

--

50

µA

VDS=0.8Max., Rating,

VGS=0V, TC=125

°C

-

200

µA

Static drain source on resistance (note)

RDS(ON)

VGS=10V, ID=2.5A

-

1.76

2.2

Ω

Forward transconductance (note)

gfs

VDS=50V, ID=2.5A

2.5

-

S

Input capacitance

Ciss

VGS=0V, VDS=25V,

f=1MHz

-

1457

-

pF

Output capacitance

Coss

-

130

-

Reverse transfer capacitance

Crss

-

38.8

-

Turn on delay time

td(on)

VDD=0.5BVDSS, ID=5.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

--

60

nS

Rise time

tr

-

150

Turn off delay time

td(off)

-

300

Fall time

tf

-

130

Total gate charge

(gate-source+gate-drain)

Qg

VGS=10V, ID=5.0A,

VDS=0.5BVDSS (MOSFET

switching time are

essentially independent of

operating temperature)

--

56

nC

Gate source charge

Qgs

-

10.3

-

Gate drain (Miller) charge

Qgd

-

22.3

-

S

1

R

----

=

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