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STP28NM50N Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STP28NM50N
Spiegazioni elettronici  N-channel Power MOSFETs developed using the second generation of MDmesh
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP28NM50N Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Electrical ratings
Doc ID 17432 Rev 2
3/21
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
D²PAK
TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
500
V
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at
TC = 25 °C
21
21 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at
TC = 100 °C
13
13 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
84
84 (1)
A
PTOT
Total dissipation at TC = 25 °C
150
35
W
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;TC=25 °C)
2500
V
dv/dt (3)
3.
ISD ≤ 21 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
D²PAK
TO-247 TO-220FP
Rthj-case
Thermal resistance junction-case max
0.83
3.6
°C/W
Rthj-amb
Thermal resistance junction-ambient
max
62.5
50
62.5
°C/W
Rthj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max
30
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
7.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
300
mJ


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