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NZT7053 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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NZT7053 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page 2N7052 NZT7053 NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C C B E TO-92 B C C SOT-223 E Symbol Characteristic Max Units 2N7052 2N7053 *NZT7053 PD Total Device Dissipation Derate above 25 °C 625 5.0 1,000 8.0 1,000 8.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 125 °C/W RθJA Thermal Resistance, Junction to Ambient 200 50 125 °C/W 2N7053 TO-226 C B E *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. Discrete POWER & Signal Technologies ã 1997 Fairchild Semiconductor Corporation |
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