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2N3392 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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2N3392 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 2 page NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 18 V, IE = 0 100 nA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 4.5 V, IC = 2.0 mA 2N3390 2N3391/A 2N3392 2N3393 400 250 150 90 800 500 300 180 SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz 2.0 10 pF hfe Small-Signal Current Gain IC = 2.0 mA, VCE = 4.5 V, f = 1.0 kHz 2N3390 2N3391/A 2N3392 2N3393 400 250 150 90 1250 800 500 400 NF Noise Figure VCE = 4.5 V, IC = 100 µA, RG = 500 Ω, 2N3391A only BW = 15.7 kHz 5.0 dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
Codice articolo simile - 2N3392 |
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Descrizione simile - 2N3392 |
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