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Motore di ricerca datesheet componenti elettronici |
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2N3416 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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2N3416 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
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2 / 2 page  NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 50 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 25 V, IE = 0 VCB = 18 V, IE = 0, TA = 100 °C 100 15 nA µA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 4.5 V, IC = 2.0 mA 2N3416 2N3417 75 180 225 540 VCE(sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 3.0 mA 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 3.0 mA 0.6 1.3 V SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain IC = 2.0 mA, VCE = 4.5 V, f = 1.0 kHz 2N3416 2N3417 75 180 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
Codice articolo simile - 2N3416 |
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Descrizione simile - 2N3416 |
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