1N5226B - 1N5257B Series Half Watt Zeners

Device

(V)

(

Ω)

(mA)

(

Ω)

(mA)

(V)

(

µA)

(%/

°C)

1N5226B

1N5227B

1N5228B

1N5229B

3.3

3.6

3.9

4.3

28

24

23

22

20

20

20

20

1,600

1,700

1,900

2,000

0.25

0.25

0.25

0.25

1.0

1.0

1.0

1.0

25

15

10

5.0

- 0.07

- 0.065

- 0.06

+/- 0.055

1N5230B

1N5231B

1N5232B

1N5233B

4.7

5.1

5.6

6.0

19

17

11

7.0

20

20

20

20

1,900

1,600

1,600

1,600

0.25

0.25

0.25

0.25

2.0

2.0

3.0

3.5

5.0

5.0

5.0

5.0

+/- 0.03

+/- 0.3

0.038

0.038

1N5234B

1N5235B

1N5236B

1N5237B

1N5238B

6.2

6.8

7.5

8.2

8.7

7.0

5.0

6.0

8.0

8.0

20

20

20

20

20

1,000

750

500

500

600

0.25

0.25

0.25

0.25

0.25

4.0

5.0

6.0

6.5

6.5

5.0

3.0

3.0

3.0

3.0

0.045

0.05

0.058

0.062

0.065

1N5239B

1N5240B

1N5241B

1N5242B

9.1

10

11

12

10

17

22

30

20

20

20

20

600

600

600

600

0.25

0.25

0.25

0.25

7.0

8.0

8.4

9.1

3.0

3.0

2.0

1.0

0.068

0.075

0.076

0.077

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Tolerance: B = 5%

Electrical Characteristics

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed

or low duty cycle operations.

@

@

@

Parameter

Value

Units

Storage Temperature Range

-65 to +200

°C

Maximum Junction Operating Temperature

+ 200

°C

Lead Temperature (1/16” from case for 10 seconds)

+ 230

°C

Total Device Dissipation

Derate above 75

°C

500

4.0

mW

mW/

°C

Surge Power**

10

W

NOTE: National preferred devices in BOLD

DO-35

©1997 Fairchild Semiconductor Corporation

1N5200B Rev. A