MMBD110T1 MMBD330T1 MMBD770T1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL CHARACTERISTICS

MMBD110T1

Figure 1. Reverse Leakage

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

Figure 3. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Noise Figure

PLO, LOCAL OSCILLATOR POWER (mW)

0.1

0.2

0.5

1.0

2.0

5.0

10

11

10

9

8

7

6

5

4

3

2

1

0

1.0

2.0

3.0

4.0

1.0

0.9

0.8

0.7

0.6

0.3

0.4

0.5

0.6

100

10

1.0

0.1

0.7

0.8

30

40

50

60

70

80

100

1.0

130

110

120

90

0.7

0.5

0.2

0.1

0.07

0.05

0.02

0.01

Figure 5. Noise Figure Test Circuit

LOCAL

OSCILLATOR

UHF

NOISE SOURCE

H.P. 349A

NOISE

FIGURE METER

H.P. 342A

DIODE IN

TUNED

MOUNT

IF AMPLIFIER

NF = 1.5 dB

f = 30 MHz

VR = 3.0 Vdc

LOCAL OSCILLATOR FREQUENCY = 1.0 GHz

(Test Circuit Figure 5)

TA = – 40°C

TA = 85°C

TA = 25°C

Note 1 — CC and CT are measured using a capacitance bridge

(Boonton Electronics Model 75A or equivalent).

Note 2 — Noise figure measured with diode under test in tuned

diode mount using UHF noise source and local oscil-

lator (LO) frequency of 1.0 GHz. The LO power is ad-

justed for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30

MHz, see Figure 5.

NOTES ON TESTING AND SPECIFICATIONS

MMBD110T1

MMBD110T1

MMBD110T1

MMBD110T1