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Motorola Bipolar Power Transistor Device Data

Advance Information

SWITCHMODE™ Series

NPN Bipolar Power Transistor

The MJE8503A transistor is designed for high voltage, high speed, power switching

in inductive circuits where fall time is critical. They are suited for line operated

switchmode applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Featuring

• 1500 Volt Collector-Base Breakdown Capability

• Fast Switching:

180 ns Typical Fall Times

450 ns Typical Crossover Times

1.2

µs Typical Storage Times

• Low Collector-Emitter Leakage Current — 100 µA Max @ 1500 VCES

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO(sus)

700

Vdc

Collector-Emitter Voltage

VCES

1500

Vdc

Collector-Base Voltage

VCBO

1500

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

5.0

10

Adc

Collector Current — Continuous

IB

IBM

4.0

4.0

Adc

Total Power Dissipation @ TC = 25°C

@ TC = 100°C

Derate above 25

°C

PD

80

21

0.8

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 65 to +125

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.25

°C/W

Maximum Lead Temperature for Soldering Purposes

1/8

″ from Case for 5 sec.

TL

275

°C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

< 10%.

SWITCHMODE is a trademark of Motorola Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE8503A/D

MJE8503A

POWER TRANSISTORS

5.0 AMPERES

1500 VOLTS — BVCES

80 WATTS

*Motorola Preferred Device

*

CASE 221A–06

TO–220AB